Details

Autor(en) / Beteiligte

• Chou, Kathleen
• Chu, Peng-Wei
• Marquis, Emmanuelle A

Titel

Data on the early oxidation of SiO 2 -coated pure Ti and bulk Ti 5 Si 3 at 800 °C

Ist Teil von

• Data in brief, 2018-10, Vol.20, p.1263

Ort / Verlag

Netherlands

Erscheinungsjahr

2018

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Oxidation of pure Ti sputtered with a 250 nm layer of amorphous SiO and bulk Ti Si was conducted at 800 °C for 2 or 32 h in a 1 standard cubic centimeter per minute (SCCM) O /4 SCCM Ar environment (approximately pO = 0.2 atm/20.3 kPa). Specimens were characterized using transmission electron microscopy, scanning transmission electron microscopy, and energy dispersive spectroscopy. The data in this article accompanies research article "Early oxidation behavior of Si-coated titanium" [1], which contains further discussion. The data for this article is hosted at the Materials Commons data repository and is available for download at https://materialscommons.org/mcapp/#/data/dataset/b8bc8038-a735-4cb9-9a9e-a0fb912b248c.