Details

Autor(en) / Beteiligte

• Huang, Chun-Ying
• Kang, Chun-Chieh
• Ma, Yu-Chi
• Chou, Yu-Cheng
• Ye, Jian-Huei
• Huang, Ru-Ting
• Siao, Chen-Zih
• Lin, Yu-Ching
• Chang, Yu-Hao
• Shen, Ji-Lin
• Lin, Tai-Yuan

Titel

p-GaN/n-ZnO nanorods: the use of graphene nanosheets composites to increase charge separation in self-powered visible-blind UV photodetectors

Ist Teil von

• Nanotechnology, 2018-11, Vol.29 (44), p.445201-445201

Ort / Verlag

England: IOP Publishing

Erscheinungsjahr

2018

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• ZnO-based heterojunctions have found applications as self-powered ultraviolet photodetectors (PDs). However, high doping levels are not compatible with high mobility for metallic doped ZnO-based PDs so further development has been inhibited. This study demonstrates a method to increase the open-circuit voltage (Voc) that allows keeping a sufficiently high level of mobility of ZnO, using a ZnO nanorod/GaN heterojunction that incorporates graphene nanosheets as the active layer. These hybrid PDs have triple the value for Voc of PDs that have only pure ZnO and better exhibit photo-response characteristics. The results of surface Kelvin probe microscopy and x-ray photoelectron spectrometer show that the complex defects that occur because Zn interstitials form a shallow donor in ZnO are mainly responsible for the increase in the value of Voc. Using this functional nanostructure as an active layer represents a new method for the manufacture of high-performance self-powered PDs.