Details

Autor(en) / Beteiligte

• Imajo, T
• Toko, K
• Takabe, R
• Saitoh, N
• Yoshizawa, N
• Suemasu, T

Titel

Fabrication of SrGe 2 thin films on Ge (100), (110), and (111) substrates

Ist Teil von

• Nanoscale research letters, 2018-01, Vol.13 (1), p.22

Ort / Verlag

United States

Erscheinungsjahr

2018

Quelle

Free E-Journal (出版社公開部分のみ）

Beschreibungen/Notizen

• Semiconductor strontium digermanide (SrGe ) has a large absorption coefficient in the near-infrared light region and is expected to be useful for multijunction solar cells. This study firstly demonstrates the formation of SrGe thin films via a reactive deposition epitaxy on Ge substrates. The growth morphology of SrGe dramatically changed depending on the growth temperature (300-700 °C) and the crystal orientation of the Ge substrate. We succeeded in obtaining single-oriented SrGe using a Ge (110) substrate at 500 °C. Development on Si or glass substrates will lead to the application of SrGe to high-efficiency thin-film solar cells.