Details

Autor(en) / Beteiligte

• Kobayashi, Shunsuke
• Mizumukai, Yuki
• Ohnishi, Tsuyoshi
• Shibata, Naoya
• Ikuhara, Yuichi
• Yamamoto, Takahisa

Titel

High Electron Mobility of Nb-Doped SrTiO3 Films Stemming from Rod-Type Sr Vacancy Clusters

Ist Teil von

• ACS nano, 2015-11, Vol.9 (11), p.10769

Ort / Verlag

United States: American Chemical Society

Erscheinungsjahr

2015

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Achieving high electron mobility in SrTiO3 films is of significant interest, particularly in relation to technological applications such as oxide semiconductors, field-induced superconductors, and thermoelectric generators. One route to achieving high electron mobility is growth of high quality SrTiO3 films with low defect concentrations. Another approach for mobility enhancement is applying a strain to the crystal. However, the maximum mobilities obtainable by these approaches are limited both by external and internal factors (currently available fabrication techniques, and maximum crystal strain, for example). In this paper, we demonstrate a unique crystal engineering approach to alter the strain in Nb-doped SrTiO3 films based on the deliberate introduction of Sr vacancy clusters. Nb-doped SrTiO3 films produced in this manner are found to exhibit remarkably enhanced electron mobilities (exceeding 53 000 cm2 V–1 s–1). This method of defect engineering is expected to enable tuning and enhancement of electron mobilities not only in SrTiO3 films, but also in thin films and bulk crystals of other perovskite-type materials.