Nanotechnology, 2014-06, Vol.25 (24), p.245201-7
2014
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Details
- Autor(en) / Beteiligte
- Titel
- Localization and electron-electron interactions in few-layer epitaxial graphene
- Ist Teil von
- Nanotechnology, 2014-06, Vol.25 (24), p.245201-7
- Ort / Verlag
- Bristol: IOP Publishing
- Erscheinungsjahr
- 2014
- Quelle
- Alma/SFX Local Collection
- Beschreibungen/Notizen
- This paper presents a study of the quantum corrections caused by electron-electron interactions and localization to the conductivity in few-layer epitaxial graphene, in which the carriers responsible for transport are massive. The results demonstrate that the diffusive model, which can generally provide good insights into the magnetotransport of two-dimensional systems in conventional semiconductor structures, is applicable to few-layer epitaxial graphene when the unique properties of graphene on the substrate, such as intervalley scattering, are taken into account. It is suggested that magnetic-field-dependent electron-electron interactions and Kondo physics are required for obtaining a thorough understanding of magnetotransport in few-layer epitaxial graphene.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0957-4484eISSN: 1361-6528DOI: 10.1088/0957-4484/25/24/245201Titel-ID: cdi_pubmed_primary_24872201
- Format
- –
- Schlagworte
- Condensed matter: electronic structure, electrical, magnetic, and optical properties, Condensed matter: structure, mechanical and thermal properties, Cross-disciplinary physics: materials science, rheology, Diffusion, Diffusion in nanoscale solids, Diffusion in solids, Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures, Electronic transport in multilayers, nanoscale materials and structures, Epitaxy, Exact sciences and technology, Fullerenes and related materials, diamonds, graphite, Graphene, interactions, Localization, Magnetic properties, Magnetic properties and materials, Magnetic properties of nanostructures, Materials science, Physics, Position (location), Semiconductors, Specific materials, Transport, Transport properties of condensed matter (nonelectronic)