Thin solid films, 2011-10, Vol.520 (1), p.569-573
2011
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Details
- Autor(en) / Beteiligte
- Titel
- Effects of UV-ozone treatment on radio-frequency magnetron sputtered ZnO thin films
- Ist Teil von
- Thin solid films, 2011-10, Vol.520 (1), p.569-573
- Ort / Verlag
- Amsterdam: Elsevier B.V
- Erscheinungsjahr
- 2011
- Quelle
- ScienceDirect
- Beschreibungen/Notizen
- The effects of UV-ozone treatment on ZnO thin films prepared by using radio-frequency magnetron sputtering are investigated. Decrease in the density of oxygen vacancy as well as increase in the density of oxygen interstitial were inferred from the UV-ozone treated samples. It was also found that a considerable difference in the work function (0.25 eV) is induced by UV-ozone treatment implying a shift in Fermi level. This shift was confirmed by capacitance–voltage measurements, which demonstrated that the boundary between the inversion region and the depletion region of a ZnO-based metal-oxide-semiconductor (MOS) capacitor positively shifts when UV ozone treated. Our results clearly indicate that the threshold voltage of a thin film transistor can be adjusted by modifying the ZnO surface via UV ozone treatment. MOS capacitors fabricated with UV-ozone treated HfO 2 and/or ZnO also yielded a smaller leakage current (~ 73%–90% smaller) and a larger breakdown voltage (~ 8%–11% larger). The physical mechanism behind the effect of the UV ozone treatment is addressed in this study with the help of X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0040-6090eISSN: 1879-2731DOI: 10.1016/j.tsf.2011.07.004Titel-ID: cdi_proquest_miscellaneous_963844535
- Format
- –
- Schlagworte
- Applied sciences, Capacitors, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Cross-disciplinary physics: materials science, rheology, Density, Deposition by sputtering, Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures, Electronics, Exact sciences and technology, Fermi surfaces, Materials science, Metal oxide semiconductors, Metal-oxide-semiconductor capacitor, Methods of deposition of films and coatings, film growth and epitaxy, Ozone, Photoelectron spectroscopy, Physics, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Surface and interface electron states, Surface double layers, schottky barriers, and work functions, Surface states, band structure, electron density of states, Thin films, Threshold voltage, Transistors, UV-ozone treatment, X-ray photoelectron spectroscopy, Zinc oxide