Details

Autor(en) / Beteiligte

• Xue, J J
• Chen, D J
• Liu, B
• Lu, H
• Zhang, R
• Zheng, Y D
• Cui, B
• Wowchak, Andrew M
• Dabiran, Amir M
• Xu, K
• Zhang, J P

Titel

Indium-rich InGaN epitaxial layers grown pseudomorphically on a nano-sculpted InGaN template

Ist Teil von

• Optics express, 2012-03, Vol.20 (7), p.8093-8099

Ort / Verlag

United States

Erscheinungsjahr

2012

Quelle

MEDLINE

Beschreibungen/Notizen

• Indium-rich InGaN epitaxial layers with a p-i-n structure were grown pseudomorphically on a strain-relaxed InGaN template to reduce structural strain induced by lattice mismatch. We applied a nano-sculpting process to improve the crystal quality of the strain-relaxed InGaN template. The results show that the nano-sculpting process can suppress effectively the threading dislocation generation and improves significantly the I-V characteristic of the InGaN p-i-n structure. This InGaN template technique with nano-sculpting process shows great potential for future applications in indium-rich InGaN optic-electron devices.