Details

Autor(en) / Beteiligte

• Le, H. Q.
• Lim, S. K.
• Goh, G. K. L.
• Chua, S. J.
• Ang, N. S. S.
• Liu, W.

Titel

Solution epitaxy of gallium-doped ZnO on p-GaN for heterojunction light-emitting diodes

Ist Teil von

• Applied physics. B, Lasers and optics, 2010-09, Vol.100 (4), p.705-710

Ort / Verlag

Berlin/Heidelberg: Springer-Verlag

Erscheinungsjahr

2010

Quelle

SpringerLink

Beschreibungen/Notizen

• We report white light emission from a Ga-doped ZnO/p-GaN heterojunction light-emitting diode which was fabricated by growing gallium-doped ZnO film on the p-GaN in water at 90°C. As determined from Ga-doped ZnO films grown on (111) oriented MgAl 2 O 4 spinel single crystal substrates, thermal treatment at 600°C in nitrogen ambient leads to a carrier concentration of 3.1×10 20 cm −3 (and carrier mobility of 28 cm 2 /Vs) which is two orders of magnitude higher than that of the undoped films. Electroluminescence emissions at wavelengths of 393 nm (3.155 eV) and 529.5 nm (2.4 eV) were observed under forward bias in the heterojunction diode and white light could be visibly observed. The high concentration of electrons supplied from the Ga-doped ZnO films helped to enhance the carrier recombination and increase the light-emitting efficiency of the heterojunction diode.