Details

Autor(en) / Beteiligte

• Yuan, P
• Baklenov, O
• Nie, H
• Holmes, AL Jr
• Streetman, B G
• Campbell, J C

Titel

High-speed and low-noise avalanche photodiode operating at 1.06 mu m

Ist Teil von

• IEEE journal of selected topics in quantum electronics, 2000-05, Vol.6 (3)

Erscheinungsjahr

2000

Quelle

IEEE Xplore Digital Library

Beschreibungen/Notizen

• Previously, it has been demonstrated that resonant-cavity-enhanced, quantum-dot avalanche photodiodes can achieve a good gain and high quantum efficiency at 1.06 mu m. In our new effort, these devices have shown RC-limited bandwidths of 35 GHz at low gain and gain-bandwidth products as high as 220 GHz. The achievable gain has been increased from ~18 to greater than 50 while keeping the quantum efficiency high. These photodiodes also exhibited low avalanche noise (k=0.24), low dark current (less than 100 nA at 90% of the breakdown voltage), and low-breakdown voltage (~17 V)