Sie befinden Sich nicht im Netzwerk der Universität Paderborn. Der Zugriff auf elektronische Ressourcen ist gegebenenfalls nur via VPN oder Shibboleth (DFN-AAI) möglich. mehr Informationen...
A comprehensive model to accurately and simply describe the trapping property and its influence on device frequency characteristics is proposed for SiC MESFET. DC performance is simulated and trap parameters are extracted. Both positive and negative frequency dispersions of transconductance are simulated and analyzed with deep level traps and self-heating effects. Good agreements with reported results are obtained.