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The electrical and optical properties of amorphous indium gallium zinc oxide (a-IGZO) films, which can be used as a channel layer, deposited by radio frequency (rf) magnetron sputtering system at room temperature (RT), were investigated as function of various gas flows. The optical transmittance of films deposited under Ar, O
2 / Ar + O
2 and O
2 / Ar-4% H
2 + O
2 atmospheres in the visible wavelength was consistently above 90% at a wavelength of 550 nm at all gas flows, although the film deposited under Ar-4% H
2 atmosphere exhibited a transmittance of below 50%. The carrier concentration and mobility of the a-IGZO films fabricated under Ar and Ar-4% H
2 were observed slight decrease as a function of the flow, respectively. The thin film transistors (TFTs) with an a-IGZO channel deposited under Ar and Ar-4% H
2 atmosphere exhibited the following good characteristics:
V
th of 0.34 V,
µ
FE of 3.6 cm
2 V
−
1
s
−
1
, on/off ratio of 10
6, and
S value of 0.04 V decade
−
1
.