Details

Autor(en) / Beteiligte

• Otis, B P
• Rabaey, J M

Titel

A 300- mu W 1.9-GHz CMOS oscillator utilizing micromachined resonators

Ist Teil von

• IEEE journal of solid-state circuits, 2003-07, Vol.38 (7)

Erscheinungsjahr

2003

Link zum Volltext

Quelle

IEL

Beschreibungen/Notizen

• A low-power low-phase-noise 1.9-GHz RF oscillator is presented. The oscillator employs a single thin-film bulk acoustic wave resonator and was implemented in a standard 0.18- mu m CMOS process. This paper addresses design issues involved in codesigning micromachined resonators with CMOS circuitry to realize ultralow-power RF transceiver components. The oscillator achieves a phase-noise performance of -100 dBc/Hz at 10-kHz offset, -120 dBc/Hz at 100-kHz offset, and -140 dBc/Hz at 1-MHz offset. The startup time of the oscillator is less than 1 mu s. The oscillator core consumes 300 mu A from a 1-V supply.