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Poly-SiGe can be used to process Micro Electro-Mechanical Systems (MEMS) directly above standard CMOS. In this work, the use of different surface pre-treatments, such as a CF4 clean or a Ti/TiN metallic interlayer, to remove unwanted interfacial oxide between a poly-SiGe MEMS structural layer and a poly-SiGe MEMS electrode in the anchor region, is explored. The effect of these treatments on anchor strength and resistivity is studied. Also the effect of the anchor design itself, on the overall anchor characteristics, is investigated. Both the CF4 pre-deposition treatment and the Ti/TiN interlayer are found to improve the anchor resistance and strength of the SiGe–SiGe anchors. In addition, using a Ti/TiN layer has the benefit of a lower strain gradient non-uniformity compared to using the CF4 clean.