Details

Autor(en) / Beteiligte

• Naghavi, N.
• Abou-Ras, D.
• Allsop, N.
• Barreau, N.
• Bücheler, S.
• Ennaoui, A.
• Fischer, C.-H.
• Guillen, C.
• Hariskos, D.
• Herrero, J.
• Klenk, R.
• Kushiya, K.
• Lincot, D.
• Menner, R.
• Nakada, T.
• Platzer-Björkman, C.
• Spiering, S.
• Tiwari, A.N.
• Törndahl, T.

Titel

Buffer layers and transparent conducting oxides for chalcopyrite Cu(In,Ga)(S,Se)2 based thin film photovoltaics: present status and current developments

Ist Teil von

• Progress in photovoltaics, 2010-09, Vol.18 (6), p.411-433

Ort / Verlag

Chichester, UK: John Wiley & Sons, Ltd

Erscheinungsjahr

2010

Quelle

Wiley-Blackwell Journals

Beschreibungen/Notizen

• The aim of the present contribution is to give a review on the recent work concerning Cd‐free buffer and window layers in chalcopyrite solar cells using various deposition techniques as well as on their adaptation to chalcopyrite‐type absorbers such as Cu(In,Ga)Se2, CuInS2, or Cu(In,Ga)(S,Se)2. The corresponding solar‐cell performances, the expected technological problems, and current attempts for their commercialization will be discussed. The most important deposition techniques developed in this paper are chemical bath deposition, atomic layer deposition, ILGAR deposition, evaporation, and spray deposition. These deposition methods were employed essentially for buffers based on the following three materials: In2S3, ZnS, Zn1 − xMgxO. Copyright © 2010 John Wiley & Sons, Ltd. The aim of the present contribution is to give a review on the recent work concerning Cd‐free buffer and window layers in chalcopyrite solar cells using various deposition techniques as well as on their adaptation to chalcopyrite‐type absorbers such as Cu(In,Ga)Se2, CuInS2, or Cu(In,Ga)(S,Se)2.