Details

Autor(en) / Beteiligte

• Joyce, Hannah J.
• Gao, Qiang
• Hoe Tan, H.
• Jagadish, C.
• Kim, Yong
• Zou, Jin
• Smith, Leigh M.
• Jackson, Howard E.
• Yarrison-Rice, Jan M.
• Parkinson, Patrick
• Johnston, Michael B.

Titel

III–V semiconductor nanowires for optoelectronic device applications

Ist Teil von

• Progress in quantum electronics, 2011-03, Vol.35 (2), p.23-75

Ort / Verlag

Elsevier Ltd

Erscheinungsjahr

2011

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Semiconductor nanowires have recently emerged as a new class of materials with significant potential to reveal new fundamental physics and to propel new applications in quantum electronic and optoelectronic devices. Semiconductor nanowires show exceptional promise as nanostructured materials for exploring physics in reduced dimensions and in complex geometries, as well as in one-dimensional nanowire devices. They are compatible with existing semiconductor technologies and can be tailored into unique axial and radial heterostructures. In this contribution we review the recent efforts of our international collaboration which have resulted in significant advances in the growth of exceptionally high quality III–V nanowires and nanowire heterostructures, and major developments in understanding the electronic energy landscapes of these nanowires and the dynamics of carriers in these nanowires using photoluminescence, time-resolved photoluminescence and terahertz conductivity spectroscopy. ► High quality III–V nanowires and nanowire heterostructures were grown. ► Electron microscopy elucidated nanowire crystal structure: zinc-blende or wurtzite. ► Photoluminescence revealed the electronic energy landscapes in these nanowires. ► Terahertz conductivity spectroscopy measured charge carrier dynamics in nanowires. ► Nanowires are prime candidates for applications in quantum electronics.