Details

Autor(en) / Beteiligte

• Shi, J.-W.
• Huang, H.-Y.
• Wang, C.-K.
• Sheu, J.-K.
• Lai, W.-C.
• Wu, Y.-S.
• Chen, C.-H.
• Chu, J.-T.
• Kuo, H.-C.
• Wei-Ping Lin
• Tsung-Hsun Yang
• Chyi, J.-I.

Titel

Phosphor-Free GaN-Based Transverse Junction Light Emitting Diodes for the Generation of White Light

Ist Teil von

• IEEE photonics technology letters, 2006-12, Vol.18 (24), p.2593-2595

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2006

Quelle

IEEE Xplore

Beschreibungen/Notizen

• We demonstrate a GaN-based phosphor-free near-white-light light-emitting-diode (LED) structure that operates in the visible wavelengths and offers broadening and flattening optical bandwidth performance. The incorporation of GaN-based dual wavelengths (blue and green) multiple-quantum-wells with a transverse p-n junction produces a device which can directly generate stable and near visible white-light emissions. The shape of the optical spectra (440-560 nm) are invariable from low to very high levels of bias currents. The problems of nonuniform carrier distribution and bias dependent electroluminescence spectra that occur in traditional phosphor-free white-light or near-white-light LEDs (with vertical p-n junctions) are eliminated by the demonstrated structure