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Investigation of cutting edge in edge-on silicon microstrip detector
Ist Teil von
Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 2010-08, Vol.620 (2), p.557-562
Ort / Verlag
Elsevier B.V
Erscheinungsjahr
2010
Link zum Volltext
Quelle
Elsevier ScienceDirect Journals Complete
Beschreibungen/Notizen
Investigation of cutting edge properties in edge-on silicon microstrip detector has been performed. An advanced approach for reducing dead layer thickness has been introduced. It consists of standard wafer sawing through entire wafer thickness, followed by dry chemical etching and thin layer passivation of the cutting surface. Proposed approach is developed in such a way that no additional photolithographic process steps and critical handling with individual chips are needed after detector fabrication. Results presented in the paper show that this approach results in effective reduction of cutting edge thickness down to 50
μm. Such reduction of dead layer thickness, together with applied efficient current termination technique resulted in substantial improvement of detector structure performance.
By described optimization of detector dead layer thickness, detection efficiency has been improved up to 15%.