Details

Autor(en) / Beteiligte

• Hajimiri, A.
• Hashemi, H.
• Natarajan, A.
• Xiang Guan
• Komijani, A.

Titel

Integrated Phased Array Systems in Silicon

Ist Teil von

• Proceedings of the IEEE, 2005, Vol.93 (9), p.1637-1655

Ort / Verlag

New York: IEEE

Erscheinungsjahr

2005

Quelle

IEEE/IET Electronic Library (IEL)

Beschreibungen/Notizen

• Silicon offers a new set of possibilities and challenges for RF, microwave, and millimeter-wave applications. While the high cutoff frequencies of the SiGe heterojunction bipolar transistors and the ever-shrinking feature sizes of MOSFETs hold a lot of promise, new design techniques need to be devised to deal with the realities of these technologies, such as low breakdown voltages, lossy substrates, low-Q passives, long interconnect parasitics, and high-frequency coupling issues. As an example of complete system integration in silicon, this paper presents the first fully integrated 24-GHz eight-element phased array receiver in 0.18-/spl mu/m silicon-germanium and the first fully integrated 24-GHz four-element phased array transmitter with integrated power amplifiers in 0.18-/spl mu/m CMOS. The transmitter and receiver are capable of beam forming and can be used for communication, ranging, positioning, and sensing applications.