Details

Autor(en) / Beteiligte

• Ishizaka, K
• Bahramy, M S
• Murakawa, H
• Sakano, M
• Shimojima, T
• Sonobe, T
• Koizumi, K
• Shin, S
• Miyahara, H
• Kimura, A
• Miyamoto, K
• Okuda, T
• Namatame, H
• Taniguchi, M
• Arita, R
• Nagaosa, N
• Kobayashi, K
• Murakami, Y
• Kumai, R
• Kaneko, Y
• Onose, Y
• Tokura, Y

Titel

Giant Rashba-type spin splitting in bulk BiTeI

Ist Teil von

• Nature materials, 2011-06, Vol.10 (7), p.521-526

Ort / Verlag

England: Nature Publishing Group

Erscheinungsjahr

2011

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• There has been increasing interest in phenomena emerging from relativistic electrons in a solid, which have a potential impact on spintronics and magnetoelectrics. One example is the Rashba effect, which lifts the electron-spin degeneracy as a consequence of spin-orbit interaction under broken inversion symmetry. A high-energy-scale Rashba spin splitting is highly desirable for enhancing the coupling between electron spins and electricity relevant for spintronic functions. Here we describe the finding of a huge spin-orbit interaction effect in a polar semiconductor composed of heavy elements, BiTeI, where the bulk carriers are ruled by large Rashba-like spin splitting. The band splitting and its spin polarization obtained by spin- and angle-resolved photoemission spectroscopy are well in accord with relativistic first-principles calculations, confirming that the spin splitting is indeed derived from bulk atomic configurations. Together with the feasibility of carrier-doping control, the giant-Rashba semiconductor BiTeI possesses excellent potential for application to various spin-dependent electronic functions.