Details

Autor(en) / Beteiligte

• El Hajj Diab, A.
• Ionica, I.
• Cristoloveanu, S.
• Allibert, F.
• Bae, Y.H.
• Chroboczek, J.A.
• Ghibaudo, G.

Titel

Low-frequency noise in SOI pseudo-MOSFET with pressure probes

Ist Teil von

• Microelectronic engineering, 2011-07, Vol.88 (7), p.1283-1285

Ort / Verlag

Amsterdam: Elsevier B.V

Erscheinungsjahr

2011

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The left figure shows noise spectrum in SOI wafers, where 1 /f noise behavior is obtained. Inset: pseudo-MOSFET configuration used in noise measurements for the first time. The right figure indicates that noise level is almost pressure-independent and the curves follow the carrier number fluctuation model. [Display omitted] ► Noise measurements at wafer level were performed using the pseudo-MOSFET configuration. ► 1 /f noise behavior in relatively thick and ultra-thin SOI layers is obtained. ► No probe pressure dependence of the noise is observed in non-passivated wafers. ► Noise measurements offer a better sensitivity in qualifying silicon-SiO 2 interfaces. Low-frequency noise (LFN) is generated by interactions of the channel carriers with interface traps and oxide charges. Therefore, noise measurements on silicon on insulator (SOI) wafers can give important information about the state of the interfaces and their defect density. Here, noise measurements at wafer level were performed using the pseudo-MOSFET ( Ψ-MOSFET) configuration. 1/ f noise behavior in relatively thick and ultra-thin SOI layers is obtained. No probe pressure dependence of the noise is observed. The influence of wafer surface states is showed and further confirmed in passivated SOI samples. Origins of noise generation are discussed.