Details

Autor(en) / Beteiligte

• Cheng, C.H.
• Chen, P.C.
• Liu, S.L.
• Wu, T.L.
• Hsu, H.H.
• Chin, Albert
• Yeh, F.S.

Titel

Bipolar switching characteristics of low-power Geo resistive memory

Ist Teil von

• Solid-state electronics, 2011-08, Vol.62 (1), p.90-93

Ort / Verlag

Kidlington: Elsevier Ltd

Erscheinungsjahr

2011

Quelle

Elsevier ScienceDirect Journals

Beschreibungen/Notizen

• ► We demonstrate GeO x RRAM with both cost-effective and ultra-low power. ► Hopping conduction mechanism effectively lowers switched currents. ► Self-compliance switched mode presents from penalties of excess forming current via filaments. ► Size-related switched power enables application of high-density memory. We reported an ultra low-power resistive random access memory (RRAM) combining a low-cost Ni electrode and covalent-bond GeO x dielectric. This cost-effective Ni/GeO x /TaN RRAM device has very small set power of 2 μW, ultra-low reset power of 130 pW, greater than 1 order of magnitude resistance window, and stable retention at 85 °C. The current flow at low-resistance state is governed by Poole–Frenkel conduction with electrons hopping via defect traps, which is quite different from the filament conduction in metal-oxide RRAM.