IEEE electron device letters, 2009-05, Vol.30 (5), p.448-450
2009
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Details
- Autor(en) / Beteiligte
- Titel
- A Study on the Failure Mechanism of a Phase-Change Memory in Write/Erase Cycling
- Ist Teil von
- IEEE electron device letters, 2009-05, Vol.30 (5), p.448-450
- Ort / Verlag
- New York, NY: IEEE
- Erscheinungsjahr
- 2009
- Quelle
- IEEE Xplore
- Beschreibungen/Notizen
- Using a phase-change memory (PCM) device composed of Ge 2 Sb 2 e 5 (GST), we studied the mechanism of the SET-stuck failure (SSF), a constantly low-resistance state during write/erase (W/E) cycling. The SSF state was characterized with increased RESET current and decreased threshold voltage, which were thought to be due to depletion of Ge and enrichment of Sb inside the active volume of GST. Moreover, we found that device characteristics of an SSF-PCM could be recovered by reversing bias polarity and the repaired device could endure many W/E cycles, implying that field-induced ion migration was the major cause of the SSF of a PCM.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0741-3106eISSN: 1558-0563DOI: 10.1109/LED.2009.2015222Titel-ID: cdi_proquest_miscellaneous_875028461
- Format
- –
- Schlagworte
- Antimony, Applied sciences, Cycles, Cycling endurance, Depletion, Design. Technologies. Operation analysis. Testing, Devices, Electron beams, Electronics, Exact sciences and technology, Fabrication, Failure analysis, Germanium, Integrated circuits, Integrated circuits by function (including memories and processors), Lithography, Migration, Nonvolatile memory, Passivation, Phase change materials, Phase change memory, phase-change memory (PCM), Polarity, reliability, Reversing, Scanning electron microscopy, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, Tellurium