Details

Autor(en) / Beteiligte

• Winkler, Mark T
• Recht, Daniel
• Sher, Meng-Ju
• Said, Aurore J
• Mazur, Eric
• Aziz, Michael J

Titel

Insulator-to-metal transition in sulfur-doped silicon

Ist Teil von

• Physical review letters, 2011-04, Vol.106 (17), p.178701-178701, Article 178701

Ort / Verlag

United States

Erscheinungsjahr

2011

Quelle

American Physical Society

Beschreibungen/Notizen

• We observe an insulator-to-metal transition in crystalline silicon doped with sulfur to nonequilibrium concentrations using ion implantation followed by pulsed-laser melting and rapid resolidification. This insulator-to-metal transition is due to a dopant known to produce only deep levels at equilibrium concentrations. Temperature-dependent conductivity and Hall effect measurements for temperatures T>1.7  K both indicate that a transition from insulating to metallic conduction occurs at a sulfur concentration between 1.8 and 4.3×10(20)  cm(-3). Conduction in insulating samples is consistent with variable-range hopping with a Coulomb gap. The capacity for deep states to effect metallic conduction by delocalization is the only known route to bulk intermediate band photovoltaics in silicon.