Details

Autor(en) / Beteiligte

• Hospodková, A.
• Pangrác, J.
• Oswald, J.
• Hazdra, P.
• Kuldová, K.
• Vyskočil, J.
• Hulicius, E.

Titel

Influence of strain reducing layers on electroluminescence and photoluminescence of InAs/GaAs QD structures

Ist Teil von

• Journal of crystal growth, 2011-01, Vol.315 (1), p.110-113

Ort / Verlag

Amsterdam: Elsevier B.V

Erscheinungsjahr

2011

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We present a comparison of photo- (PL) and electro-luminescence (EL) spectra of quantum dot (QD) structures with different strain reducing layers (SRL). Simple QD structures without SRL have negligible difference between the PL and EL maxima, which are near 1250 nm. InGaAs and GaAsSb SRLs were used to shift the luminescence maximum towards telecommunication wavelengths at 1.3 or 1.55 μm. We have found that MOVPE prepared QD structures with SRL exhibit an EL maximum at a considerably shorter wavelength than the PL maximum measured on similar samples without doping in the absence of built-in electric field. A mechanism to explain this phenomenon is proposed for both types of SRLs. The GaAsSb SRL is more suitable for long wavelength EL due to the higher confinement potential of electrons compared to InGaAs SRL. EL maximum at 1300 nm and PL maximum at 1520 nm were achieved on InAs QD structures with GaAs 0.87Sb 0.13 SRL (type I heterojunction).