Details

Autor(en) / Beteiligte

• Han, Seung-Yeol
• Herman, Gregory S
• Chang, Chih-hung

Titel

Low-Temperature, High-Performance, Solution-Processed Indium Oxide Thin-Film Transistors

Ist Teil von

• Journal of the American Chemical Society, 2011-04, Vol.133 (14), p.5166-5169

Ort / Verlag

United States: American Chemical Society

Erscheinungsjahr

2011

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Solution-processed In2O3 thin-film transistors (TFTs) were fabricated by a spin-coating process using a metal halide precursor, InCl3, dissolved in acetonitrile. A thin and uniform film can be controlled and formed by adding ethylene glycol. The synthesized In2O3 thin films were annealed at various temperatures ranging from 200 to 600 °C in air or in an O2/O3 atmospheric environment. The TFTs annealed at 500 °C under air exhibited a high field-effect mobility of 55.26 cm2 V−1 s−1 and an I on/I off current ratio of 107. In2O3 TFTs annealed under an O2/O3 atmosphere at temperatures from 200 to 300 °C exhibited excellent n-type transistor behaviors with field-effect mobilities of 0.85−22.14 cm2 V−1 s−1 and I on/I off ratios of 105−106. The annealing atmosphere of O2/O3 elevates solution-processed In2O3 TFTs to higher performance at lower processing temperature.