Details

Autor(en) / Beteiligte

• Shah, Lubna R
• Zhu, Hao
• Wang, W G
• Ali, Bakhtyar
• Zhu, Tao
• Fan, Xin
• Song, Y Q
• Wen, Q Y
• Zhang, H W
• Shah, S Ismat
• Xiao, John Q

Titel

Effect of Zn interstitials on the magnetic and transport properties of bulk Co-doped ZnO

Ist Teil von

• Journal of physics. D, Applied physics, 2010-01, Vol.43 (3), p.035002-035002

Ort / Verlag

Bristol: IOP Publishing

Erscheinungsjahr

2010

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We have demonstrated that the bound magnetic polaron model is responsible for ferromagnetism in Co–ZnO semiconductors, where the carriers are provided by the interstitial zinc (Zn i ). Our experiment is unique since by changing the temperature, we are able to cross the carrier concentration threshold above which a long-range ferromagnetic order is established. Consequently, the ferromagnetic order is observed at room temperature but is weakened at temperatures below 100 K. To support our conclusion we have performed a systematic investigation on the structural, magnetic and transport properties which all give consistent results in the context of our proposed two-region model, i.e. (a) a Zn i layer where carriers are sufficient to couple Co ions ferromagnetically and (b) a region with little carriers that remain in a paramagnetic state.