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Effect of Zn interstitials on the magnetic and transport properties of bulk Co-doped ZnO
Ist Teil von
Journal of physics. D, Applied physics, 2010-01, Vol.43 (3), p.035002-035002
Ort / Verlag
Bristol: IOP Publishing
Erscheinungsjahr
2010
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
We have demonstrated that the bound magnetic polaron model is responsible for ferromagnetism in Co–ZnO semiconductors, where the carriers are provided by the interstitial zinc (Zn
i
). Our experiment is unique since by changing the temperature, we are able to cross the carrier concentration threshold above which a long-range ferromagnetic order is established. Consequently, the ferromagnetic order is observed at room temperature but is weakened at temperatures below 100 K. To support our conclusion we have performed a systematic investigation on the structural, magnetic and transport properties which all give consistent results in the context of our proposed two-region model, i.e. (a) a Zn
i
layer where carriers are sufficient to couple Co ions ferromagnetically and (b) a region with little carriers that remain in a paramagnetic state.