Details

Autor(en) / Beteiligte

• Caldwell, Joshua D.
• Anderson, Travis J.
• Hobart, Karl D.
• Jernigan, Glenn G.
• Culbertson, James C.
• Kub, Fritz J.
• Tedesco, Joseph L.
• Hite, Jennifer K.
• Mastro, Michael A.
• Myers-Ward, Rachael L.
• Eddy, Charles R.
• Campbell, Paul M.
• Gaskill, D. Kurt

Titel

Dry Techniques for Epitaxial Graphene Transfer

Ist Teil von

• MRS proceedings, 2010, Vol.1259 (1), Article 1259-S18-05

Ort / Verlag

New York, USA: Cambridge University Press

Erscheinungsjahr

2010

Beschreibungen/Notizen

• Epitaxial graphene (EG) grown on the carbon-face of SiC has been shown to exhibit higher carrier mobilities in comparison to other growth techniques amenable to wafer-scale graphene fabrication. The transfer of large area (>mm2) graphene films to substrates amenable for specific applications is desirable. We demonstrate the dry transfer of EG from the C-face of 4H-SiC onto SiO2, GaN and Al2O3 substrates via two approaches using either 1) thermal release tape or 2) a spin-on, chemically-etchable dielectric. Van der Pauw devices fabricated from C-face EG transferred to SiO2 gave similar mobility values and up to three fold reductions in carrier density in comparison to devices fabricated on as-grown material.