Details

Autor(en) / Beteiligte

• KIM, J. H
• SEONG, D
• IHM, G. H
• RHEE, C

Titel

Measurement of the thermal conductivity of Si and GaAs wafers using the photothermal displacement technique

Ist Teil von

• International journal of thermophysics, 1998, Vol.19 (1), p.281-290

Ort / Verlag

New York, NY: Springer

Erscheinungsjahr

1998

Quelle

SpringerLINK Contemporary (Konsortium Baden-Württemberg)

Beschreibungen/Notizen

• Thermal conductivity and thermal diffusivity of Si and GaAs wafers were measured using the photothermal displacement technique, and the temperature dependence of these two quantities was investigated. Thermal diffusivity was obtained from the phase difference between the heating source and the signal, and thermal conductivity was determined from the maximum value of the signal amplitude in the temperature range 80 to 300 K. It was verified that an increase in doping concentration gives rise to a decrease in thermal conductivity at low temperatures. The experimental results obtained on samples with different types and doping concentrations are consistent with those expected from theoretical considerations.