IEEE transactions on nuclear science, 2010-02, Vol.57 (1), p.266-271
2010
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Details
- Autor(en) / Beteiligte
- Titel
- Catastrophic Failure in Highly Scaled Commercial NAND Flash Memories
- Ist Teil von
- IEEE transactions on nuclear science, 2010-02, Vol.57 (1), p.266-271
- Ort / Verlag
- New York: IEEE
- Erscheinungsjahr
- 2010
- Quelle
- IEEE Electronic Library Online
- Beschreibungen/Notizen
- Heavy ion single-event measurements on a variety of high density commercial NAND flash memories are reported. Three single event effect (SEE) phenomena were investigated: single effect upsets (SEUs), single effect functional interrupts (SEFIs), and a new high current phenomenon which at high LETs results in catastrophic loss of ability to erase and program the device.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0018-9499eISSN: 1558-1578DOI: 10.1109/TNS.2009.2035315Titel-ID: cdi_proquest_miscellaneous_743661091
- Format
- –
- Schlagworte
- Catastrophic, Catastrophic failure analysis, Circuits, destructive, Devices, dielectric gate rupture, Flash memory, Flash memory (computers), High current, High density, Interrupts, Laboratories, Logic arrays, Logic devices, micro-dose, NASA, Nonvolatile memory, Propulsion, single event, Single Event Effects, Single event upset, Space technology