Details

Autor(en) / Beteiligte

• Pearton, S.J.
• Lim, W.T.
• Wright, J.S.
• Tien, L.C.
• Kim, H.S.
• Norton, D.P.
• Wang, H.T.
• Kang, B.S.
• Ren, F.
• Jun, J.
• Lin, J.
• Osinsky, A.

Titel

ZnO and Related Materials for Sensors and Light-Emitting Diodes

Ist Teil von

• Journal of electronic materials, 2008-09, Vol.37 (9), p.1426-1432

Ort / Verlag

Boston: Springer US

Erscheinungsjahr

2008

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• ZnO is an attractive material for ultraviolet (UV) light emitters and detectors, and transparent thin-film transistors. It is also readily synthesized in the form of nanostructures. In this paper we discuss the fabrication of a number of ZnO thin-film and nanowire devices, including transistors, diodes, and UV and pH sensors. ZnO has been effectively used as a gas sensor material based on the near-surface modification of charge distribution with surface-absorbed species. The large surface area of the nanorods makes them attractive for gas and chemical sensing, and the ability to control their nucleation sites makes them candidates for high-density sensor arrays.