Details

Autor(en) / Beteiligte

• Vilela, M.F.
• Lofgreen, D.D.
• Smith, E.P.G.
• Newton, M.D.
• Venzor, G.M.
• Peterson, J.M.
• Franklin, J.J.
• Reddy, M.
• Thai, Y.
• Patten, E.A.
• Johnson, S.M.
• Tidrow, M.Z.

Titel

LWIR HgCdTe Detectors Grown on Ge Substrates

Ist Teil von

• Journal of electronic materials, 2008-09, Vol.37 (9), p.1465-1470

Ort / Verlag

Boston: Springer US

Erscheinungsjahr

2008

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Long-wavelength infrared (LWIR) HgCdTe p -on- n double-layer heterojunctions (DLHJs) for infrared detector applications have been grown on 100 mm Ge (112) substrates by molecular beam epitaxy (MBE). The objective of this current work was to grow our baseline p -on- n DLHJ detector structure (used earlier on Si substrates) on 100 mm Ge substrates in the 10  μ m to 11  μ m LWIR spectral region, evaluate the material properties, and obtain some preliminary detector performance data. Material characterization techniques included are X-ray rocking curves, etch pit density (EPD) measurements, compositional uniformity determined from Fourier-transform infrared (FTIR) transmission, and doping concentrations determined from secondary-ion mass spectroscopy (SIMS). Detector properties include resistance-area product (RoA), spectral response, and quantum efficiency. Results of LWIR HgCdTe detectors and test structure arrays (TSA) fabricated on both Ge and silicon (Si) substrates are presented and compared. Material properties demonstrated include X-ray full-width of half-maximum (FWHM) as low as 77 arcsec, typical etch pit densities in mid 10 6  cm −2 and wavelength cutoff maximum/minimum variation <2% across the full wafer. Detector characteristics were found to be nearly identical for HgCdTe grown on either Ge or Si substrates.