Details

Autor(en) / Beteiligte

• Deng, Shengling
• Neogi, Tuhin G
• Novak, Joseph
• McDonald, John
• Huang, Rena

Titel

Design of a short electro-optic modulator based on SiGe HBT structure

Ist Teil von

• Optics express, 2010-02, Vol.18 (3), p.1994-2001

Ort / Verlag

United States

Erscheinungsjahr

2010

Quelle

EZB Electronic Journals Library

Beschreibungen/Notizen

• A SiGe electro-optic modulator operating at wavelength of 1.55 microm is proposed. The "ON" state voltage is set at 1.4V. The arm of the MZI waveguide required to generate a pi phase shift is 73.6 microm, and the total attenuation loss is 3.95 dB. The rise and fall delay time is 70.9 ps and 24.5 ps, respectively.