Details

Autor(en) / Beteiligte

• Behnia, Kamran
• Méasson, Marie-Aude
• Kopelevich, Yakov

Titel

Oscillating Nernst-Ettingshausen effect in bismuth across the quantum limit

Ist Teil von

• Physical review letters, 2007-04, Vol.98 (16), p.166602-166602

Ort / Verlag

United States

Erscheinungsjahr

2007

Quelle

American Physical Society Journals

Beschreibungen/Notizen

• In elemental bismuth, 10(5) atoms share a single itinerant electron. Therefore, a moderate magnetic field can confine electrons to the lowest Landau level. We report on the first study of metallic thermoelectricity in this regime. The main thermoelectric response is off-diagonal with an oscillating component several times larger than the nonoscillating background. When the first Landau level attains the Fermi energy, both the Nernst and the Ettingshausen coefficients sharply peak, and the latter attains a temperature-independent maximum. These features are yet to be understood. We note a qualitative agreement with a theory invoking current-carrying edge excitations.