Details

Autor(en) / Beteiligte

• Usta, Hakan
• Facchetti, Antonio
• Marks, Tobin J

Titel

Air-Stable, Solution-Processable n-Channel and Ambipolar Semiconductors for Thin-Film Transistors Based on the Indenofluorenebis(dicyanovinylene) Core

Ist Teil von

• Journal of the American Chemical Society, 2008-07, Vol.130 (27), p.8580-8581

Ort / Verlag

United States: American Chemical Society

Erscheinungsjahr

2008

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We present here the synthesis, characterization, and field-effect performance of a novel n-channel semiconducting molecule TIFDMT and of the corresponding thiophene-based copolymer P-IFDMT4 based on the indenofluorenebis(dicyanovinylene) core. TIFDMT-based field-effect transistors fabricated by spin-coating exhibit high electron mobilities of 0.10−0.16 cm2/V s in air, low turn-on voltages (∼0 to +5 V), and high on/off ratios of 107−108. These devices also exhibit excellent air stability over a prolonged time of storage in ambient conditions. P-IFDMT4-based devices exhibit the first example of an air-stable ambipolar polymer processable from solution