Details

Autor(en) / Beteiligte

• DUAN, Chun-Gang
• SABIRYANOV, R. F
• JIANJUN LIU
• MEI, W. N
• DOWBEN, P. A
• HARDY, J. R

Titel

Strain induced half-metal to semiconductor transition in GdN

Ist Teil von

• Physical review letters, 2005-06, Vol.94 (23), p.237201.1-237201.4, Article 237201

Ort / Verlag

Ridge, NY: American Physical Society

Erscheinungsjahr

2005

Quelle

American Physical Society

Beschreibungen/Notizen

• We investigate the electronic structure and magnetic properties of GdN as a function of unit cell volume. Based on the first-principles calculations of GdN, we observe that there is a transformation in the conduction properties associated with the volume increase: first from half-metallic to semimetallic, then ultimately to semiconducting. We show that applying stress can alter the carrier concentration as well as mobility of the holes and electrons in the majority spin channel. In addition, we found that the exchange parameters depend strongly on lattice constant, thus the Curie temperature of this system can be enhanced by applying stress or doping impurities.