Details

Autor(en) / Beteiligte

• Rogozin, A.
• Vinnichenko, M.
• Shevchenko, N.
• Kreissig, U.
• Kolitsch, A.
• Möller, W.

Titel

Real-time evolution of electrical properties and structure of indium oxide and indium tin oxide during crystallization

Ist Teil von

• Scripta materialia, 2009-02, Vol.60 (4), p.199-202

Ort / Verlag

Elsevier Ltd

Erscheinungsjahr

2009

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Indium oxide and tin-doped indium oxide amorphous films grown by pulsed reactive magnetron sputtering were annealed in vacuum. The film structure and properties were studied using in situ X-ray diffraction, spectroscopic ellipsometry, elastic recoil detection analysis and four-point probe measurements. The electrical properties of the indium oxide film change mainly before the onset of crystallization outset. In contrast, the crystallization of tin-doped indium oxide caused a decrease in resistivity due to Sn donor activation with an estimated efficiency of 40%.