Details

Autor(en) / Beteiligte

• Thapa, S.B.
• Hertkorn, J.
• Scholz, F.
• Prinz, G.M.
• Leute, R.A.R.
• Feneberg, M.
• Thonke, K.
• Sauer, R.
• Klein, O.
• Biskupek, J.
• Kaiser, U.

Titel

Growth and studies of Si-doped AlN layers

Ist Teil von

• Journal of crystal growth, 2008-11, Vol.310 (23), p.4939-4941

Ort / Verlag

Elsevier B.V

Erscheinungsjahr

2008

Quelle

Elsevier ScienceDirect Journals

Beschreibungen/Notizen

• Edge-type threading dislocations (TDs) can be reduced by increasing the epilayer thickness of undoped AlN grown on c -plane sapphire substrate by low pressure MOVPE. Indium as a surfactant helps to reduce cracks in both, undoped and Si-doped AlN epilayers. For high Si concentrations, edge-type TDs bend and bunch together and finally emerge as V-pits on the epilayer surface. We observed an increasing intensity ratio between the deep level transitions at around 3 eV and the near-band-edge luminescence of the low temperature (10 K) CL spectra for increasing Si concentration, whereas the electrical conductivity decreased in the range of higher doping concentration. A fair electrical conductivity is obtained for a sample having moderate Si concentration of 2 × 10 18 cm - 3 .