Details

Autor(en) / Beteiligte

• Islomov, A. Kh
• Saidkhanova, N.G.
• Lutpullaev, S.L.
• Tin, Chin Che
• Kumta, A.
• Saliev, T.M.
• Atabaev, B.G.
• Matchanov, N.A.
• Atabaev, I.G.
• Nuritdinov, I.
• Amanov, M.Z.
• Bakhranov, E.N.
• Zhang, J.
• Yuzikaeva, F.R.
• Rusli, Rusli

Titel

Diffusion and Electroluminescence Studies of Low Temperature Diffusion of Boron in 3C-SiC

Ist Teil von

• Materials science forum, 2009, Vol.600-603, p.457-460

Ort / Verlag

Trans Tech Publications Ltd

Erscheinungsjahr

2009

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The characteristics of boron diffusion in 3C-SiC at low temperature have been measured using spreading resistance technique and electroluminescence spectroscopy. The coefficient of boron diffusion in the temperature range of 1150 –1250°С has been found to be about 5.5 x 10-11–5.0 x 10-10 cm2/sec and the activation energy of boron diffusion was determined to be about 0.9 –1.15 eV. Electroluminescence spectra of 3C-SiC p-n junction structures showed peaks at 750 and 630 nm due to growth defects and carbon-silicon divacancies respectively.