Details

Autor(en) / Beteiligte

• Hong, H-J
• Riu, D-H
• Cho, K-Y
• Kong, E-B
• Shin, D-G
• Shin, D-K
• Lee, J-S

Titel

EFFECT OF BORON CARBIDE ON THE MORPHOLOGY OF SiC CONVERSION LAYER OF GRAPHITE SUBSTRATE FORMED BY CHEMICAL VAPOUR REACTION

Ist Teil von

• Hanʼguk Seramik Hakhoe chi, 2007-01, Vol.44 (8), p.445-450

Erscheinungsjahr

2007

Beschreibungen/Notizen

• A conversion layer of SiC was fabricated on a graphite substrate by a chemical vapour reaction method to enhance the oxidation resistance of graphite. The effect of a boron carbide containing powder bed on the morphology of SiC conversion layer was investigated during the chemical vapour reaction of graphite with the reactive silicon source at 1650 C and 1700 C for 1 h. The presence of boron species enhanced the conversion of graphite into SiC, and also altered the morphology of the conversion layer significantly. A continuous and thick SiC conversion layer was formed only when the boron source was used with the other silicon compounds. The boron is deemed to increase the diffusion of SiOx in SiC/C system. 21 refs.