Details

Autor(en) / Beteiligte

• Stahlbush, Robert E.
• Skowronski, Marek
• Zhang, X.
• Caldwell, Joshua D.
• Liu, Kendrick X.

Titel

Differences in Emission Spectra of Dislocations in 4H-SiC Epitaxial Layers

Ist Teil von

• Materials science forum, 2009-01, Vol.600-603, p.345-348

Ort / Verlag

Trans Tech Publications Ltd

Erscheinungsjahr

2009

Link zum Volltext

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Material defects such as Si-core and C-core partial dislocations (PDs) and threading screw dislocations (TSDs) and threading edge dislocations (TEDs) are being investigated for their contributions to device performances in 4H-SiC. Non-destructive electroluminescence and photoluminescence techniques can be powerful tools for examining these dislocations. In this report, these techniques were used to reveal the different spectral characteristics for the mentioned dislocations. At higher injection levels, both the Si-core and C-core PDs possessed a spectral peak at 700 nm. However, at lower injection levels, the spectral peak for the Si-core PD remained at 700 nm while the peak for the C-core moved to longer wavelengths. For the threading dislocations, TSDs possessed a peak between 800 and 850 nm while the TEDs possessed a peak at 600 nm independent of the injection levels.