Details

Autor(en) / Beteiligte

• Woo, J.C.
• Kim, G.H.
• Kim, J.G.
• Kim, C.I.

Titel

Etching characteristic of ZnO thin films in an inductively coupled plasma

Ist Teil von

• Surface & coatings technology, 2008-08, Vol.202 (22-23), p.5705-5708

Ort / Verlag

Amsterdam: Elsevier B.V

Erscheinungsjahr

2008

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• The etching characteristics of ZnO and etch selectivities of ZnO to SiO2 in CF4/Ar, Cl2/Ar and BCl3/Ar plasma were investigated. The etch rate in CF4/Ar plasma was lower than that in Cl containing plasma. The maximum etch rates of ZnO were 129.3 nm/min at Cl2 (80%) /Ar (20%) and 172.4 nm/min at BCl3 (80%) /Ar (20%). The etch rate of ZnO showed a non-monotonic behavior with increasing from 0% to 80% Cl2 and/or BCl3 fraction in Cl2/Ar and BCl3/Ar plasmas. The plasmas were characterized using optical emission spectroscopy (OES) analysis measurements. The chemical states of etched surfaces were investigated with X-ray photoelectron spectroscopy (XPS).