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Electrical and structural properties of TaSiN electrode for phase change random access memory
Thin solid films, 2009-05, Vol.517 (14), p.3837-3840
2009

Details

Autor(en) / Beteiligte
Titel
Electrical and structural properties of TaSiN electrode for phase change random access memory
Ist Teil von
  • Thin solid films, 2009-05, Vol.517 (14), p.3837-3840
Ort / Verlag
Amsterdam: Elsevier B.V
Erscheinungsjahr
2009
Link zum Volltext
Quelle
Elsevier ScienceDirect Journals Complete
Beschreibungen/Notizen
  • Characteristics of tantalum silicon nitride (TaSiN) thin films have been investigated as an electrode material for Ge 2Sb 2Te 5 chalcogenide phase change material. The films were deposited by co-sputtering system in which the ratio of tantalum nitride to silicon was controlled by the plasma power on each target. The TaSiN films showed tunable resistivity from 260 to 560 μΩ cm with increasing Si content. From the evaluation of PRAM cell structures consisting of the TaSiN and the Ge 2Sb 2Te 5, we found that the SET voltages are nicely correlated with the resistivity of the TaSiN. Moreover, the sensing margin (resistance ratio: R SET/ R RESET) turned out to be good for practical application.
Sprache
Englisch
Identifikatoren
ISSN: 0040-6090
eISSN: 1879-2731
DOI: 10.1016/j.tsf.2009.01.153
Titel-ID: cdi_proquest_miscellaneous_34760874
Format
–
Schlagworte
Composition and phase identification, Condensed matter: electronic structure, electrical, magnetic, and optical properties, Condensed matter: structure, mechanical and thermal properties, Cross-disciplinary physics: materials science, rheology, Deposition by sputtering, Electrical properties of specific thin films, Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures, Electronic transport phenomena in thin films and low-dimensional structures, Exact sciences and technology, Materials science, Methods of deposition of films and coatings, film growth and epitaxy, Phase change random access memory (PRAM), Physics, RESET, SET, Surfaces and interfaces, thin films and whiskers (structure and nonelectronic properties), Tantalum silicon nitride, Thin film structure and morphology

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