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Pulsed laser deposition technique is used for deposition of tungsten-doped indium oxide films. The effect of film thickness on structural, optical and electrical properties was studied using X-ray diffraction (XRD), atomic force microscopy, UV–visible spectroscopy, and electrical measurements. X-ray diffraction study reveals that all the films are highly crystalline and oriented along (2
2
2) direction and the film crystallinity increases with increase in film thickness. Atomic force microscopy analysis shows that these films are very smooth with root mean square surface roughness of ∼1.0
nm. Bandgap energy of the films depends on thickness and varies from 3.71
eV to 3.94
eV. It is observed that resistivity of the films decreases with thickness, while mobility increases.