Details

Autor(en) / Beteiligte

• Xu, S.R.
• Hao, Y.
• Zhang, J.C.
• Zhou, X.W.
• Yang, L.A.
• Zhang, J.F.
• Duan, H.T.
• Li, Z.M.
• Wei, M.
• Hu, S.G.
• Cao, Y.R.
• Zhu, Q.W.
• Xu, Z.H.
• Gu, W.P.

Titel

Improvements in a-plane GaN crystal quality by AlN/AlGaN superlattices layers

Ist Teil von

• Journal of crystal growth, 2009-07, Vol.311 (14), p.3622-3625

Ort / Verlag

Amsterdam: Elsevier B.V

Erscheinungsjahr

2009

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Non-polar (1 1 2¯ 0) a-plane GaN films have been grown by low-pressure metal-organic vapor deposition on r-plane (1 1¯ 0 2) sapphire substrate. We report on an approach of using AlN/AlGaN superlattices (SLs) for crystal quality improvement of a-plane GaN on r-plane sapphire. Using X-ray diffraction and atomic force microscopy measurements, we show that the insertion of AlN/AlGaN SLs improves crystal quality, reduces surface roughness effectively and eliminates triangular pits on the surface completely.