Journal of non-crystalline solids, 2009-07, Vol.355 (18), p.1103-1106
2009
Volltextzugriff (PDF)
Details
- Autor(en) / Beteiligte
- Titel
- Doubly positively charged oxygen vacancies in silica glass
- Ist Teil von
- Journal of non-crystalline solids, 2009-07, Vol.355 (18), p.1103-1106
- Ort / Verlag
- Oxford: Elsevier B.V
- Erscheinungsjahr
- 2009
- Quelle
- Alma/SFX Local Collection
- Beschreibungen/Notizen
- The geometric and electronic structures of doubly positively charged oxygen vacancies in a-SiO 2 are calculated. We have found four types of relaxed configurations in the amorphous matrix, corresponding to puckered and unpuckerd configurations of Si atoms of the vacancy. The predicted optical absorption strongly depends on the atomic configuration of particular center and transition energies are distributed in the range from 4.5 to 6.5 eV.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0022-3093eISSN: 1873-4812DOI: 10.1016/j.jnoncrysol.2008.11.043Titel-ID: cdi_proquest_miscellaneous_34568118
- Format
- –
- Schlagworte
- Absorption, Amorphous semiconductors, Amorphous semiconductors, metals, and alloys, Condensed matter: structure, mechanical and thermal properties, Defects, Density functional theory, Disordered solids, Exact sciences and technology, Physics, Radiation effects, Silica, Structure of solids and liquids, crystallography