Details

Autor(en) / Beteiligte

• Schlosser, M
• Bhuwalka, K.K
• Sauter, M
• Zilbauer, T
• Sulima, T
• Eisele, I

Titel

Fringing-Induced Drain Current Improvement in the Tunnel Field-Effect Transistor With High- [Formula Omitted] Gate Dielectrics

Ist Teil von

• IEEE transactions on electron devices, 2009-01, Vol.56 (1), p.100-108

Ort / Verlag

New York: The Institute of Electrical and Electronics Engineers, Inc. (IEEE)

Erscheinungsjahr

2009

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• In this paper, we evaluate the influence of using a high-kappa gate dielectric in the tunnel FET compared to a standard silicon oxide with same equivalent oxide thickness, which exhibits a quite different behavior compared to a conventional MOSFET due to its totally different working principle.