Details

Autor(en) / Beteiligte

• Kim, Chan-Kyung
• Kong, Bai-Sun
• Lee, Chil-Gee
• Jun, Young-Hyun

Titel

CMOS temperature sensor with ring oscillator for mobile DRAM self-refresh control

Ist Teil von

• 2008 IEEE International Symposium on Circuits and Systems, 2008, p.3094-3097

Ort / Verlag

IEEE

Erscheinungsjahr

2008

Quelle

IEEE Electronic Library Online

Beschreibungen/Notizen

• This paper presents novel low-cost CMOS temperature sensor for controlling the self-refresh period of a mobile DRAM. In the proposed temperature sensor, the temperature dependency of poly resistance is used to generate a temperature-dependent bias current, and a ring oscillator driven by this bias current is employed to obtain the digital code pertaining to on-chip temperature. This method is highly area-efficient, simple and easy for IC implementation as compared to traditional temperature sensors based on bandgap reference. The proposed CMOS temperature sensor was fabricated with an 80nm 3-metal DRAM process, which occupies extremely small silicon area of only about 0.016 mm 2 with under 1uW power consumption for providing 0.7°c effective resolution at 1 sample/sec processing rate. This result indicates that as much as 73% area reduction was obtained with improved resolution as compared to the conventional temperature sensor in mobile DRAM.