IEEE journal of solid-state circuits, 2008-11, Vol.43 (11), p.2381-2389
2008
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Details
- Autor(en) / Beteiligte
- Titel
- A 512 Mb Two-Channel Mobile DRAM (OneDRAM) With Shared Memory Array
- Ist Teil von
- IEEE journal of solid-state circuits, 2008-11, Vol.43 (11), p.2381-2389
- Ort / Verlag
- New York, NY: IEEE
- Erscheinungsjahr
- 2008
- Quelle
- IEEE Xplore (IEEE/IET Electronic Library - IEL)
- Beschreibungen/Notizen
- A 512 Mb two-channel mobile DRAM (OneDRAM) is developed with 90 nm technology. It can operate on a 1.8 V power supply as two separate mobile DDR or SDR DRAMs through each channel with maximum data rate of 333 Mbps/pin because of its exclusive accessibility from each channel to memory arrays. Data exchange between two channels is also possible by sharing one common memory array, and a new control scheme of DRAM for this sharing is proposed. The new control scheme is based on direct addressing mode to achieve compatibility with normal DRAM interface together with fast data transfer speed between two channels.
- Sprache
- Englisch
- Identifikatoren
- ISSN: 0018-9200eISSN: 1558-173XDOI: 10.1109/JSSC.2008.2004523Titel-ID: cdi_proquest_miscellaneous_34407448
- Format
- –
- Schlagworte
- Applied sciences, Arrays, Cellular phones, Channels, Circuits, CMOS memory integrated circuits, Communication system control, Consumer electronics, Control systems, Data exchange, Data transfer (computers), Design. Technologies. Operation analysis. Testing, DRAM chips, Dynamic random access memory, Electronic equipment and fabrication. Passive components, printed wiring boards, connectics, Electronics, Exact sciences and technology, Integrated circuits, Integrated circuits by function (including memories and processors), Magnetic and optical mass memories, Memory management, Modems, Personal digital assistants, Power supplies, Process control, Random access memory, Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices, shared memory systems, Storage and reproduction of information