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InGaAs quantum wires grown on (1 0 0)InP substrates
Ist Teil von
Journal of crystal growth, 2009-03, Vol.311 (7), p.1851-1854
Ort / Verlag
Amsterdam: Elsevier B.V
Erscheinungsjahr
2009
Quelle
Alma/SFX Local Collection
Beschreibungen/Notizen
We have investigated the growth of InGaAs wires on InP substrates by tuning the Ga composition. Nanostructures including InAs, In
0.95Ga
0.05As, In
0.90Ga
0.10As, and In
0.85Ga
0.15As were grown on In
0.53Ga
0.26Al
0.21As buffer layers. For the growth of InAs nanostructures, elliptical quantum dots are observed. As we add Ga composition to the nanostructures, quantum wires arrays along the [0
1¯
1] direction are formed for In
0.95Ga
0.05As and In
0.90Ga
0.10As nanostructures, and the In
0.85Ga
0.15As nanostructure shows a dash-wire morphology. The In
0.90Ga
0.10As quantum wires have a photoluminescence spectrum of emission peak at
λ
∼
1680
nm and a narrow full-width at half-maximum of 65
meV at 10
K. The In
0.90Ga
0.10As quantum wires show a high emission polarization anisotropy of 47%.