Details

Autor(en) / Beteiligte

• Tzeng, T.E.
• Chen, C.Y.
• Feng, David J.
• Lay, T.S.

Titel

InGaAs quantum wires grown on (1 0 0)InP substrates

Ist Teil von

• Journal of crystal growth, 2009-03, Vol.311 (7), p.1851-1854

Ort / Verlag

Amsterdam: Elsevier B.V

Erscheinungsjahr

2009

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• We have investigated the growth of InGaAs wires on InP substrates by tuning the Ga composition. Nanostructures including InAs, In 0.95Ga 0.05As, In 0.90Ga 0.10As, and In 0.85Ga 0.15As were grown on In 0.53Ga 0.26Al 0.21As buffer layers. For the growth of InAs nanostructures, elliptical quantum dots are observed. As we add Ga composition to the nanostructures, quantum wires arrays along the [0 1¯ 1] direction are formed for In 0.95Ga 0.05As and In 0.90Ga 0.10As nanostructures, and the In 0.85Ga 0.15As nanostructure shows a dash-wire morphology. The In 0.90Ga 0.10As quantum wires have a photoluminescence spectrum of emission peak at λ ∼ 1680 nm and a narrow full-width at half-maximum of 65 meV at 10 K. The In 0.90Ga 0.10As quantum wires show a high emission polarization anisotropy of 47%.