Details

Autor(en) / Beteiligte

• Lin, J.M.
• Zhang, Y.Z.
• Ye, Z.Z.
• Gu, X.Q.
• Pan, X.H.
• Yang, Y.F.
• Lu, J.G.
• He, H.P.
• Zhao, B.H.

Titel

Nb-doped ZnO transparent conducting films fabricated by pulsed laser deposition

Ist Teil von

• Applied surface science, 2009-04, Vol.255 (13), p.6460-6463

Ort / Verlag

Amsterdam: Elsevier B.V

Erscheinungsjahr

2009

Quelle

Alma/SFX Local Collection

Beschreibungen/Notizen

• Nb-doped ZnO thin films have been prepared on glass substrates by pulsed laser deposition (PLD). The effect of substrate temperature has been investigated from 100 to 500 °C by analyzing the structural, optical, and electrical properties. The Nb-doped ZnO films possessed a good crystallinity with a c-axis preferential orientation and a high transmittance (above 85%) in the visible region. The obtained film deposited at 350 °C exhibited the best electrical properties with the lowest room-temperature resistivity of around 5 × 10 −4 Ω cm. Guided by x-ray photoemission spectroscopy analysis, Nb Zn 3+ is believed to be the very possible donor in the Nb-doped ZnO films.